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RIC7S113L4 Datasheet PDF

International Rectifier RIC7S113L4

The RIC7S113L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Part No. RIC7S113L4
Datasheet RIC7S113L4 Download
Manufacturer
International Rectifier
Description RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
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RIC7S113L4 datasheet page 1 preview

FEATURES

Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOFFSET IO+/VOUT ton/off (typ.) Delay Matching(typ.) 400V max. 2A / 2A 10 - 20V 120 & 100 ns 5 ns n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs n Hermetically Sealed n Lightweight

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DESCRIPTION

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
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