Si4410DYPbF Datasheet PDF | International Rectifier

International Rectifier Si4410DYPbF

This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

Part No.	Si4410DYPbF
Datasheet	Si4410DYPbF Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

PD - 95168 Si4410DYPbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D VDSS = 30V 6D 5 D RDS(on) = 0.0135Ω Top View SO-8

ABSOLUTE MAXIMUM RATINGS

VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C V/ns mJ V °C Units °C/W 1 09/22/04 Si4410DYPbF

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.010 0.0135 ––– 0.015 0.020 Ω VGS = 10V, ID = 10A VGS = 4.5V, ID = 5.