Si4420DYPbF Datasheet PDF | International Rectifier

International Rectifier Si4420DYPbF

This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

Part No.	Si4420DYPbF
Datasheet	Si4420DYPbF Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

HEXFET® Power MOSFET AA 1 8D 2 7D 3 6D 4 5D Top View VDSS = 30V RDS(on) = 0.009Ω SO-8

ABSOLUTE MAXIMUM RATINGS

VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max. 30 ±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C mJ V °C Units °C/W 1 8/11/04 Si4420DYPbF

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resista...