A1516 - SILICON PNP TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) Good Linearity of hFE Complement to Type 2SC3907 www.DataSheet4U.com APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RAT

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Datasheet Details

Part number	A1516
Manufacturer	Inchange Semiconductor
File Size	173.90 KB
Description	SILICON PNP TRANSISTOR
Datasheet	A1516 Datasheet

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 www.DataSheet4U.com APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.2 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.