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A968B Datasheet 2sa968b

Manufacturer: Inchange Semiconductor

Overview: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A.

General Description

·With TO-220 package ·plement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA968 VCBO Collector-base voltage 2SA968A 2SA968B 2SA968 VCEO Collector-emitter voltage 2SA968A 2SA968B VEBO IC IE PT Tj Tstg Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter .DataSheet.co.kr CONDITIONS VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Datasheet pdf - http://..net/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA968 V(BR)CEO Collector-emitter breakdown voltage 2SA968A 2SA968B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency IE=-1mA;

IC=0 IC=-10mA;

IB=0 2SA968 2SA968A 2SA968B CONDITIONS MIN -160 -180 -200 -5 TYP.

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