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PS2801-4 - AlGaAs infrared emitting diode

General Description

The PS2801x-4 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic SO16 package with different lead forming options.

Key Features

  • High isolation 3750 VRMS.
  • CTR flexibility available see order information.
  • DC input with transistor output.
  • Operating temperature range - 55 °C to 110 °C.
  • REACH compliance.
  • Halogen free.
  • MSL class 1.

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Datasheet Details

Part number PS2801-4
Manufacturer ISOCOM MICRON
File Size 1.18 MB
Description AlGaAs infrared emitting diode
Datasheet download datasheet PS2801-4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISOCOM MICRON SEMICONDUCTOR CO., LTD PS2801x-4 Series Description The PS2801x-4 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic SO16 package with different lead forming options. With the robust coplanar double mold structure, PS2801x-4 series provide the most stable isolation feature.