TLP281-4 - AlGaAs infrared emitting diode

General Description

The TLP281-4x series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic SO16 package with different lead forming options.

Key Features

High isolation 3750 VRMS.
CTR flexibility available see order information.
DC input with transistor output.
Operating temperature range - 55 °C to 110 °C.
REACH compliance.
Halogen free.
MSL class 1.

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TLP281-4 algaas infrared emitting diode by ISOCOM MICRON - Datasheet Preview

Datasheet Details

Part number	TLP281-4
Manufacturer	ISOCOM MICRON
File Size	1.19 MB
Description	AlGaAs infrared emitting diode
Datasheet	TLP281-4 Datasheet

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ISOCOM MICRON SEMICONDUCTOR CO., LTD TLP281-4x Series Description The TLP281-4x series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic SO16 package with different lead forming options. With the robust coplanar double mold structure, TLP281-4x series provide the most stable isolation feature.