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H11L1 - GaAs infrared emitting diode

General Description

The H11L1 (UL Approval) and H11L1V (UL and VDE Approvals) devices each consist of a GaAs infrared emitting diode optically coupled to a high speed output integrated Microprocessor Compatible Schmitt trigger detector, which provides hysteresis for noise immunity and pulse shaping.

Key Features

  • High Data Rate, 1MHz typical (NRZ).
  • Free from Latch Up and Oscillation.
  • Microprocessor Compatible Drive.
  • Logical Compatible Output sinks 16mA at 0.4V maximum.
  • Guaranteed On/Off Threshold Hysteresis.
  • Wide Supply Voltage Capability, compatible with all popular Logic Systems.
  • Operating Voltage Range VCC 3V to 16V.
  • Operating Temperature Range - 55°C to +100°C.
  • High AC Isolation voltage 5000VRMS.
  • Lead Free and.

📥 Download Datasheet

Datasheet Details

Part number H11L1
Manufacturer ISOCOM
File Size 1.94 MB
Description GaAs infrared emitting diode
Datasheet download datasheet H11L1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISOCOM COMPONENTS H11L1, H11L1V DESCRIPTION The H11L1 (UL Approval) and H11L1V (UL and VDE Approvals) devices each consist of a GaAs infrared emitting diode optically coupled to a high speed output integrated Microprocessor Compatible Schmitt trigger detector, which provides hysteresis for noise immunity and pulse shaping. FEATURES • High Data Rate, 1MHz typical (NRZ) • Free from Latch Up and Oscillation • Microprocessor Compatible Drive • Logical Compatible Output sinks 16mA at 0.