24C016 Description
It is fabricated using ISSI’s advanced CMOS EEPROM technology and provides a low power and low voltage operation.
24C016 Key Features
- Low Power CMOS Technology -- Standby Current less than 2 µA (5.5V) -- Read Current (typical) less than 1 mA (5.5V) -- Wr
- 100 KHz (1.8V) and 400 KHz (5V) patibility
- Hardware Data Protection -- Write Protect Pin
- Sequential Read Feature
- Filtered Inputs for Noise Suppression
- 8-pin PDIP and 8-pin SOIC packages
- Self time write cycle with auto clear -- 5 ms @ 2.5V
- 16-Byte Page Write Buffer
- Two-Wire Serial Interface -- Bi-directional data transfer protocol
- High Reliability -- Endurance: 1,000,000 Cycles -- Data Retention: 100 Years