IS24C01-3 Datasheet | ISSI

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM ISSIISSI®® ADVANCE INFORMATION APRIL 1998 Features - Low power CMOS - Active current less than 2 mA - Standby current less than 8 µA - Low voltage operation - 3.0V (Vcc = 2.7V to 5.5V) - Hardware write protection - Write control pin - Internally organized as 128 x 8 - Two-wire serial interface - Bidirectional data transfer protocol - 8-Byte page-write mode - Minimized total write time per byte - 100 KHz at 3V; 400 KHz at 5V - Automatic word address incrementing - Sequential register read - Self-timed write cycle - Maximum write cycle time of 10 ms - Endurance: 100K cycles per byte - 8-pin PDIP or SOIC packages - Filtered...