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IS24C128-2 - 2-WIRE SERIAL CMOS EEPROM

General Description

The IS24C128-2 is a 1.8V (1.8V-5.5V) 128K-bit (16384 x 8) Electrically Erasable PROM, IS24C128-3 is a 2.5V (2.5V5.5V) 128K-bit (16384 x 8) Electrically Erasable PROM, IS24C256-2 is a 1.8V (1.8V-5.5V) 256K-bit (32768 x 8) Electrically Erasable PROM and the IS24C256-3 is a 2.5V (2.5V-5.5V) 256K-bit (3

Key Features

  • Low Power CMOS Technology.
  • Standby Current less than 10 µA (5.5V).
  • Read Current (typical) less than 1 mA (5.5V).
  • Write Current (typical) less than 3 mA (5.5V).
  • Low Voltage Operation.
  • IS24C256-2 & IS24C128-2: Vcc = 1.8V to 5.5V.
  • IS24C256-3 & IS24C128-3: Vcc = 2.5V to 5.5V.
  • 100 KHz (1.8V), 400 KHz (2.5V) and 1MHz (5V) Compatibility.
  • Hardware Data Protection.
  • Write Protect Pin.
  • Sequential Read Featur.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS24C128-3 2-WIRE SERIAL CMOS EEPROM
IS24C128 2-WIRE SERIALCMOS EEPROM
IS24C128A 2-WIRE SERIAL CMOS EEPROM
IS24C16 2-WIRE SERIAL CMOS EEPROM
IS24C16-2 2-WIRE SERIAL CMOS EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS24C128-2/3 IS24C256-2/3 ISSI® 262,144-bit/131,072-bit 2-WIRE SERIAL CMOS EEPROM ADVANCED INFORMATION JULY 2002 FEATURES • Low Power CMOS Technology – Standby Current less than 10 µA (5.5V) – Read Current (typical) less than 1 mA (5.5V) – Write Current (typical) less than 3 mA (5.5V) • Low Voltage Operation – IS24C256-2 & IS24C128-2: Vcc = 1.8V to 5.5V – IS24C256-3 & IS24C128-3: Vcc = 2.5V to 5.5V • 100 KHz (1.8V), 400 KHz (2.5V) and 1MHz (5V) Compatibility • Hardware Data Protection – Write Protect Pin • Sequential Read Feature • Filtered Inputs for Noise Suppression • Self time write cycle with auto clear – 5 ms @ 2.