IS34ML02G084 Datasheet | ISSI

IS34ML02G084 IS35ML02G084 2Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 2Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML02G084 Features - Flexible & Efficient Memory Architecture - Organization: 256Mb x8 - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell - Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms - typical - Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 µA...