IS35MW02G084
Key Features
- Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 256Mb x8 /128Mb x16 - X8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (128M + 4M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte
- Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms - typical
- Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1:
