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IS42R32160F - 512Mb SDRAM

Key Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42R32160D 512Mb SDRAM
IS42R16160D 256-MBIT SYNCHRONOUS DRAM
IS42R16320D 512Mb SDRAM
IS42R16320F 512Mb SDRAM
IS42R83200D 256-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F 16Mx32, 512Mb SDRAM NOVEMBER 2015 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.