Download the IS42RM32400E datasheet PDF.
This datasheet also covers the IS42SM81600E variant, as both devices belong to the same 128mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.
General Description
ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.
All input and output signals refer to the rising edge of the clock input.
Both write and read accesses to the SDRAM are burst oriented.
Key Features
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access and precharge.
Programmable CAS latency: 2, 3.
Programmable Burst Length: 1, 2, 4, 8, and Full Page.
Full PDF Text Transcription for IS42RM32400E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS42RM32400E. For precise diagrams, tables, and layout, please refer to the original PDF.
IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all ...
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4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full APRIL 2011 DESCRIPTION ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pip
IS42RM32400E Datasheet
