IS42RM32400E Overview
ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented.
IS42RM32400E Key Features
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access and precharge
- Programmable CAS latency: 2, 3
- Programmable Burst Length: 1, 2, 4, 8, and Full Page
- Programmable Burst Sequence
- Sequential and Interleave
- Auto Refresh (CBR)
- TCSR (Temperature pensated Self Refresh)
- PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
- Deep Power Down Mode (DPD)