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IS42S32160D Datasheet 512mb Sdram

Manufacturer: ISSI (now Infineon)

Overview: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42S32160F 512Mb SDRAM
IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200E SYNCHRONOUS DYNAMIC RAM
IS42S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32400E 128Mb SYNCHRONOUS DRAM
IS42S32400F 4M x 32 128Mb SYNCHRONOUS DRAM
IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
IS42S32800G 256Mb SYNCHRONOUS DRAM
IS42S32800J 256Mb SYNCHRONOUS DRAM

IS42S32160D Distributor