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IS42S32400F - 4M x 32 128Mb SYNCHRONOUS DRAM

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commerci.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S32400E 128Mb SYNCHRONOUS DRAM
IS42S32160D 512Mb SDRAM
IS42S32160F 512Mb SDRAM
IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200E SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S32400F IS45S32400F 4M x 32 128Mb SYNCHRONOUS DRAM JUNE 2024 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.