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IS42S81600D - 128-MBIT SYNCHRONOUS DRAM

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply IS42S81600D VDD VDDQ 3.3V 3.3V IS42S16800D 3.3V 3.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh with programmable refres.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S81600B 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600F 128Mb SYNCHRONOUS DRAM
IS42S83200C 256Mb Single Data Rate Synchronous DRAM
IS42S83200G 256Mb SYNCHRONOUS DRAM
IS42S83200J 256Mb SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S81600D IS42S16800D 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JULY 2008 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S81600D VDD VDDQ 3.3V 3.3V IS42S16800D 3.3V 3.