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IS42VM16800E Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS42VM16800E datasheet preview

Datasheet Details

Part number IS42VM16800E
Datasheet IS42VM16800E IS42VM81600E Datasheet (PDF)
File Size 383.88 KB
Manufacturer ISSI (now Infineon)
Description 128Mb Mobile Synchronous DRAM
IS42VM16800E page 2 IS42VM16800E page 3

IS42VM16800E Overview

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented.

IS42VM16800E Key Features

  • Fully synchronous; all signals referenced to a
  • Internal bank for hiding row access and pre
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full
  • Programmable Burst Sequence
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature pensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8
  • Deep Power Down Mode (DPD)
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42VM16800E Distributor

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