Datasheet Summary
IS43/46DR83200B IS43/46DR16160B
32Mx8, 16Mx16 DDR2 DRAM
Features
- Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-patible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported
- Posted CAS and programmable additive latency (AL)
0, 1, 2, 3, 4, 5 and 6 supported
- WRITE latency = READ latency
- 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and re- duced strength options
-...