IS43DR16160B Overview
IS43/46DR83200B IS43/46DR16160B 32Mx8, 16Mx16 DDR2 DRAM.
IS43DR16160B Key Features
- Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-patible)
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup
- Posted CAS and programmable additive latency (AL)
- WRITE latency = READ latency
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and re