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IS43LD32800B - 256Mb Mobile LPDDR2 S4 SDRAM

This page provides the datasheet information for the IS43LD32800B, a member of the IS46LD16160B 256Mb Mobile LPDDR2 S4 SDRAM family.

Description

The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM.

The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Features

  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface.
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
  • Four-bit Pre-fetch DDR Architecture.
  • Multiplexed, double data rate, command/address inputs.
  • Four internal banks for concurrent operation.
  • Bidirectional/differential data strobe per byte of d.

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Datasheet preview – IS43LD32800B

Datasheet Details

Part number IS43LD32800B
Manufacturer ISSI
File Size 4.09 MB
Description 256Mb Mobile LPDDR2 S4 SDRAM
Datasheet download datasheet IS43LD32800B Datasheet
Additional preview pages of the IS43LD32800B datasheet.

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Full PDF Text Transcription

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IS43/46LD16160B IS43/46LD32800B 256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.
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