• Part: IS43LD32800B
  • Description: 256Mb Mobile LPDDR2 S4 SDRAM
  • Manufacturer: ISSI
  • Size: 4.09 MB
Download IS43LD32800B Datasheet PDF
ISSI
IS43LD32800B
FEATURES - Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V - High Speed Un-terminated Logic(HSUL_12) I/O Interface - Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) - Four-bit Pre-fetch DDR Architecture - Multiplexed, double data rate, mand/address inputs - Four internal banks for concurrent operation - Bidirectional/differential data strobe per byte of data (DQS/DQS#) - Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16) - ZQ Calibration - On-chip temperature sensor to control self refresh rate - Partial - array self refresh(PASR) - Deep power-down mode(DPD) - Operation Temperature mercial (TC = 0°C to 85°C) Industrial (TC = -40°C to 85°C) Automotive, A1 (TC = -40°C to 85°C) Automotive, A2 (TC = -40°C to 105°C) OPTIONS - Configuration: - 16Mx16 (4M x 16 x 4 banks) - 8Mx32 (2M x 32 x 4 banks) Package: - 134-ball BGA for x16 / x32 - 168-ball Po P BGA for x32 DESCRIPTION JUNE...