IS43LR32640B - 2Gb Mobile DDR SDRAM

This page provides the datasheet information for the IS43LR32640B, a member of the IS46LR32640B 2Gb Mobile DDR SDRAM family.

Product Overview

ISSI

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Datasheet Details

Part number	IS43LR32640B
Manufacturer	ISSI
File Size	2.70 MB
Description	2Gb Mobile DDR SDRAM
Datasheet	IS43LR32640B Datasheet
Additional preview pages of the IS43LR32640B datasheet.

IS43LR32640B Product details

Description

The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Features

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional data.

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Other Datasheets by ISSI

IS43LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32100C - 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32100D - 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200B - 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200C - 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32320B - 8M x 32Bits x 4Banks Mobile DDR SDRAM

Published: Feb 17, 2024 |