Datasheet Summary
IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL
512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC
Features
- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
- Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward patible to 1.5V
- 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) based on tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or
Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Refresh Interval:
7.8 µs (8192 cycles/64 ms) Tc= -40°C...