IS43TR85120B
IS43TR85120B is 4Gb DDR3 SDRAM manufactured by ISSI.
- Part of the IS46TR16256B comparator family.
- Part of the IS46TR16256B comparator family.
IS43/46TR16256B, IS43/46TR16256BL, IS43/46TR85120B, IS43/46TR85120BL
512Mx8, 256Mx16 4Gb DDR3 SDRAM
Features
- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
- Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward patible to 1.5V
- High speed data transfer rates with system frequency up to 1066 MHz
- 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) based on t CK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Refresh Interval:
7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C 0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C
OPTIONS
- Configuration: 512Mx8, 256Mx16
- Green Package: 96-ball BGA (9mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8
SEPTEMBER 2023
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8 only)
- OCD (Off-Chip Driver Impedance Adjustment)
- Dynamic ODT (On-Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Write...
