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IS45S83200G Datasheet 256Mb SYNCHRONOUS DRAM

Manufacturer: ISSI (now Infineon)

Download the IS45S83200G datasheet PDF. This datasheet also includes the IS42S83200G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42S83200G-ISSI.pdf) that lists specifications for multiple related part numbers.

Overview

IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS.

Key Features

  • Clock frequency: 200,166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS45S83200C 256 Mb Single Data Rate Synchronous DRAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS45S83200D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S83200J 256Mb SYNCHRONOUS DRAM
IS45S83200L 256Mb SYNCHRONOUS DRAM
IS45S81600F 128Mb SYNCHRONOUS DRAM
IS45S86400D 512Mb SDRAM
IS45S86400F 512Mb SDRAM
IS45S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160G 256Mb SYNCHRONOUS DRAM
IS45S16160J 256Mb SYNCHRONOUS DRAM
IS45S16160L 256Mb SYNCHRONOUS DRAM