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IS45VM16160M Datasheet

Manufacturer: ISSI (now Infineon)
IS45VM16160M datasheet preview

Datasheet Details

Part number IS45VM16160M
Datasheet IS45VM16160M-ISSI.pdf
File Size 932.15 KB
Manufacturer ISSI (now Infineon)
Description 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160M page 2 IS45VM16160M page 3

IS45VM16160M Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS45VM16160M Key Features

  • JEDEC standard1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade)
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS45VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45VM16800E 128Mb Mobile Synchronous DRAM
IS45VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400E 128Mb Mobile Synchronous DRAM
IS45VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM

IS45VM16160M Distributor

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