IS45VM16160M - 4M x 16Bits x 4Banks Mobile Synchronous DRAM

Product Overview

ISSI

Part number	IS45VM16160M
Manufacturer	ISSI
File Size	932.15 KB
Description	4M x 16Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS45VM16160M Datasheet
Additional preview pages of the IS45VM16160M datasheet.

These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

JEDEC standard1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade).
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask func.

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Published: Jul 14, 2024 |