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IS45VM16160M - 4M x 16Bits x 4Banks Mobile Synchronous DRAM

General Description

These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Key Features

  • JEDEC standard1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade).
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask func.

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Full PDF Text Transcription for IS45VM16160M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS45VM16160M. For precise diagrams, and layout, please refer to the original PDF.

IS42/45VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM Preliminary Information Description These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM o...

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se IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features ▪ JEDEC standard1.

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