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IS45VM32200M Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS45VM32200M datasheet preview

Datasheet Details

Part number IS45VM32200M
Datasheet IS45VM32200M IS42VM32200M Datasheet (PDF)
File Size 856.23 KB
Manufacturer ISSI (now Infineon)
Description 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32200M page 2 IS45VM32200M page 3

IS45VM32200M Overview

These IS42SM/RM/VM32200M are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input.

IS45VM32200M Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS45VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400E 128Mb Mobile Synchronous DRAM
IS45VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32800M 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM

IS45VM32200M Distributor

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