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IS46DR86400E Datasheet

Manufacturer: ISSI (now Infineon)
IS46DR86400E datasheet preview

Datasheet Details

Part number IS46DR86400E
Datasheet IS46DR86400E-ISSI.pdf
File Size 1.18 MB
Manufacturer ISSI (now Infineon)
Description DDR2 DRAM
IS46DR86400E page 2 IS46DR86400E page 3

IS46DR86400E Overview

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. 64Mx8 (16Mx8x4 banks) IS43/46DR86400E 32Mx16 (8Mx16x4 banks) IS43/46DR16320E Package:.

IS46DR86400E Key Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
  • JEDEC standard 1.8V I/O (SSTL_18-patible)
  • Double data rate interface: two data transfers
  • Differential data strobe (DQS, DQS)
  • 4-bit prefetch architecture
  • On chip DLL to align DQ and DQS transitions
  • 4 internal banks for concurrent operation
  • Programmable CAS latency (CL) 3, 4, 5, and 6
  • Posted CAS and programmable additive latency
  • WRITE latency = READ latency
ISSI (now Infineon) logo - Manufacturer

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IS46DR86400E Distributor

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