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IS46LR32100C - 512K x 32Bits x 2Banks Mobile DDR SDRAM

General Description

The IS43/46LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Key Features

  • JEDEC standard 1.8V power supply.
  • Two internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional data strobe per byte of data (DQS).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM

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IS43LR32100C IS46LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features • JEDEC standard 1.