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IS46TR16256EC - 4Gb DDR3 SDRAM

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46TR16256ECL 4Gb DDR3 SDRAM
IS46TR16256A 4Gb DDR3 SDRAM
IS46TR16256AL 4Gb DDR3 SDRAM
IS46TR16256B 4Gb DDR3 SDRAM
IS46TR16256BL 4Gb DDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 95°C 1.95 µs (8192 cycles/16 ms) Tc= 95°C to 105°C 0.