IS46TR85120EC - 4Gb DDR3 SDRAM

This page provides the datasheet information for the IS46TR85120EC, a member of the IS46TR16256EC 4Gb DDR3 SDRAM family.

Product Overview

ISSI

Part number	IS46TR85120EC
Manufacturer	ISSI
File Size	4.57 MB
Description	4Gb DDR3 SDRAM
Datasheet	IS46TR85120EC Datasheet
Additional preview pages of the IS46TR85120EC datasheet.

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Burst Sequence: Sequential or Interleave.

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS41C16100 - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 17, 2024 |