Datasheet Summary
IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC
128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH
SRAM
Features
DESCRIPTION
APRIL 2017
- Internal self-timed write cycle
- Individual Byte Write Control and Global Write
- Clock controlled, registered address, data and control
- Burst sequence control using MODE input
- Three chip enable option for simple depth expansion and address pipelining
- mon data inputs and data outputs
- Auto Power-down during deselect
The 4Mb product family Features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for munication and...