IS61VVPS25636B - 9Mb Single CYCLE DESELECT STATIC RAM
ISSI (now Infineon)
Download the IS61VVPS25636B datasheet PDF.
This datasheet also covers the IS61LPS51218B variant, as both devices belong to the same 9mb single cycle deselect static ram family and are provided as variant models within a single manufacturer datasheet.
General Description
The 9Mb product family
Key Features
Internal self-timed write cycle.
Individual Byte Write Control and Global Write.
Clock controlled, registered address, data and
control.
Burst sequence control using MODE input.
Three chip enable option for simple depth ex-
pansion and address pipelining.
Full PDF Text Transcription for IS61VVPS25636B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS61VVPS25636B. For precise diagrams, and layout, please refer to the original PDF.
IS61LPS51218B, IS61LPS25636B, IS61LPS25632B, IS64LPS25636B, IS61VPS/VVPS51218B, IS61VPS/VVPS25636B 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCL...
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56K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM MAY 2017 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth ex- pansion and address pipelining • Common data inputs and data outputs • Auto Power-down during deselect • Single cycle deselect • Snooze MODE for reduced-power standby • JTAG Boundary Scan for BGA package • Power Supply LPS: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VPS: Vdd 2.5V (+ 5%), Vddq
IS61VVPS25636B Datasheet
