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IS61WV102416FBLL Datasheet 1m X 16 High-speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV102416FALL IS61/64WV102416FBLL 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

FUNCTIONAL BLOCK DIAGRAM The ISSI IS61/64WV102416FALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time: 8ns, 10ns, 20ns.
  • High- performance, low power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61WV102416FALL).
  • 2.4V-3.6V VDD (IS61/64WV102416FBLL).
  • Packages available : - 48 ball mini BGA (6mm x 8mm) - 48 pin TSOP (Type I) - 54 pin TSOP (Type II).
  • Industrial and Automotive temperature support.
  • Lead-free availa.

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More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV10248ALL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV10248EEALL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM