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IS61WV25616EDALL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Key Features

  • High-speed access time: 20ns.
  • Single power supply.
  • 1.65V-2.2V VDD.
  • Low Standby Current:1.5mA (typical).
  • Fully static operation: no clock or refresh required.
  • Data control.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and Correction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV25616EDALL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2020 KEY FEATURES  High-speed access time: 20ns  Single power supply – 1.65V-2.2V VDD  Low Standby Current:1.