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IS61WV25616LEBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability.

Key Features

  • High-speed access time: 12ns, 15ns.
  • Single power supply.
  • 2.4V-3.6V VDD.
  • Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ. ).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection.
  • ALE# pin to latch Address & CS# signals.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Full PDF Text Transcription for IS61WV25616LEBLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS61WV25616LEBLL. For precise diagrams, and layout, please refer to the original PDF.

IS61WV25616LEBLL IS64WV25616LEBLL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC JULY 2019 KEY FEATURES  High-speed access time: 12ns, 15ns ...

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SS & ECC JULY 2019 KEY FEATURES  High-speed access time: 12ns, 15ns  Single power supply – 2.4V-3.6V VDD  Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ.)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection  ALE# pin to latch Address & CS# signals.  Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM A0 – A17 LATCH DECODER ALE# CS# LATCH OE# WE# UB# LB# ZZ# CONTROL CIRCUIT .

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