IS61WV25616LEBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Product Overview

ISSI

Part number	IS61WV25616LEBLL
Manufacturer	ISSI
File Size	795.37 KB
Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV25616LEBLL Datasheet
Additional preview pages of the IS61WV25616LEBLL datasheet.

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

High-speed access time: 12ns, 15ns.
Single power supply.
2.4V-3.6V VDD.
Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ. ).
Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection.
ALE# pin to latch Address & CS# signals.
Industrial and Automotive temperature support.
Lead-free available.

📁 Similar Datasheet

IS61WV12816DALL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61WV12816DALS - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61WV12816DBLL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61WV12816DBLS - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61WV51216ALL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61WV51216BLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
IS61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)
IS61C1024L - 128K x 8 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 18, 2024 |