Datasheet4U Logo Datasheet4U.com

IS61WV2568FALL Datasheet 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Overview: IS61/64WV2568FALL IS61/64WV2568FBLL 256Kx8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM AUGUST 2020.

Download the IS61WV2568FALL datasheet PDF. This datasheet also includes the IS64WV2568FALL variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

General Description

The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power devices.

Key Features

  • High-speed access time: 8, 10ns, 12ns.
  • Low Active Current: 35mA (Max. , 10ns, I-temp).
  • Low Standby Current: 10 mA (Max. , I-temp).
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV2568FALL).
  • 2.4V-3.6V VDD (IS61/64WV2568FBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV2568FBLL 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM