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IS61WV51216EDBLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV51216EDBLL datasheet PDF. This datasheet also covers the IS61WV51216EDALL variant, as both devices belong to the same 512k x 16 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

cated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single Power Supply.
  • Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
  • Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV51216EDALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV51216EEBLL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV51232ALL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51232ALS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single Power Supply – Vdd = 1.65V to 2.2V (IS61WV51216EDALL) – Vdd = 2.4V to 3.