IS61WV51216EDBLL Key Features
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refresh
- TTL patible inputs and outputs
- Single Power Supply
- Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
- Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
