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IS62WV102416FALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV102416FALL/FBLL are high-speed, low power, 16M bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 35mA (max. ).
  • CMOS standby Current: 5.5uA (typ. ).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV102416FALL).
  • 2.2V-3.6V VDD (IS62/65WV102416FBLL).
  • Three state outputs.
  • Commercial, Industrial and Automotive temperature support.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV102416FBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS62WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS62WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV102416FALL/BLL IS65WV102416FALL/BLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBURARY 2020 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state outputs  Commercial, Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV102416FALL/FBLL are high-speed, low power, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.