Datasheet4U Logo Datasheet4U.com

IS62WV10248EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (62/65WV10248EALL).
  • 2.2V-3.6V VDD (62/65WV10248EBLL).
  • Data control for upper and lower bytes.
  • Automotive temperature (-40oC to +125oC).
  • Lead-free available BLOCK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS62WV1288ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV1288BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV10248EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248HALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248HBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV10248EALL/BLL IS65WV10248EALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC)  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.