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IS62WV10248EBLL Datasheet Ultra Low Power CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS62WV10248EALL/BLL IS65WV10248EALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (62/65WV10248EALL).
  • 2.2V-3.6V VDD (62/65WV10248EBLL).
  • Data control for upper and lower bytes.
  • Automotive temperature (-40oC to +125oC).
  • Lead-free available BLOCK.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS62WV10248EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248HALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248HBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS62WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS62WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416FALL ULTRA LOW POWER CMOS STATIC RAM

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