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IS62WV10248HALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV10248HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 25 mA (max. ).
  • CMOS Standby Current: 3.2 uA (typ. , 25°C).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV10248HALL).
  • 2.2V-3.6V VDD (IS62/65WV10248HBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV10248HBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248DBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV10248HALL/BLL IS65WV10248HALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2022 KEY FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV10248HALL) – 2.2V-3.6V VDD (IS62/65WV10248HBLL) • Three state outputs • Industrial and Automotive temperature support • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV10248HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.