IS62WV10248HALL Datasheet | ISSI

FEATURES - High-speed access time: 45ns, 55ns - CMOS low power operation - Operating Current: 25 m A (max.) - CMOS Standby Current: 3.2 u A (typ., 25°C) - TTL patible interface levels - Single power supply - 1.65V-2.2V VDD (IS62/65WV10248HALL) - 2.2V-3.6V VDD (IS62/65WV10248HBLL) - Three state outputs - Industrial and Automotive temperature support - Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV10248HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. The IS62/65WV10248HALL/BLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). A0 - A19 VDD GND I/O0 - I/O7 DECODER 1M x 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CS# or CS1#/CS2 OE# WE# CONTROL CIRCUIT Copyright © 2022 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not remend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support...