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IS62WV1288DALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

128K words by 8 bits.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation: 12 mW (typical) operating 4 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply: 1.65V--2.2V Vdd (62WV1288DALL) 2.3V--3.6V Vdd (62WV1288DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial and automotive temperature support.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

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IS62WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM OCTOBER 2009 FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW (typical) operating 4 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V--2.2V Vdd (62WV1288DALL) 2.3V--3.6V Vdd (62WV1288DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial and automotive temperature support • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL are high-speed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.