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IS62WV51216EBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV51216EBLL datasheet PDF. This datasheet also covers the IS62WV51216EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

words by 16 bits.

performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V.
  • 2.2V VDD (62/65WV51216EALL).
  • 2.2V--3.6V VDD (62/65WV51216EBLL).
  • Data control for upper and lower bytes.
  • Automotive temperature (-40oC to +125oC) BLOCK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV51216EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV51216ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV51216BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV5128ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV5128BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV5128CLL 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV51216EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV51216GALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV51216GBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV5128DBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62/65WV51216EALL IS62/65WV51216EBLL 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC) BLOCK DIAGRAM DESCRIPTION The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.