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IS62WV51216EBLL Datasheet

Manufacturer: ISSI (now Infineon)
IS62WV51216EBLL datasheet preview

IS62WV51216EBLL Details

Part number IS62WV51216EBLL
Datasheet IS62WV51216EBLL IS62WV51216EALL Datasheet (PDF)
File Size 1.22 MB
Manufacturer ISSI (now Infineon)
Description ULTRA LOW POWER CMOS STATIC RAM
IS62WV51216EBLL page 2 IS62WV51216EBLL page 3

IS62WV51216EBLL Overview

The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

IS62WV51216EBLL Key Features

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
  • 36 mW (typical) operating
  • 12 µW (typical) CMOS standby
  • TTL patible interface levels
  • Single power supply -1.65V-2.2V VDD (62/65WV51216EALL)
  • 2.2V--3.6V VDD (62/65WV51216EBLL)
  • Data control for upper and lower bytes
  • Automotive temperature (-40oC to +125oC)

Similar Datasheets

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Integrated Silicon Solution Logo IS62WV51216ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS62WV51216BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

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