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IS62WV5128DALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

by 8 bits.

CMOS technology.

Key Features

  • High-speed access time: 35, 45, 55 ns.
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V.
  • 2.2V Vdd (IS62WV5128DALL) 2.3V.
  • 3.6V Vdd (IS62WV5128DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM F EB R U ARY 2012 FEATURES • High-speed access time: 35, 45, 55 ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V – 2.2V Vdd (IS62WV5128DALL) 2.3V – 3.6V Vdd (IS62WV5128DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free available DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.