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IS65C25616EL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65C25616EL datasheet PDF. This datasheet also covers the IS62C25616EL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62/65C25616EL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 5.0uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single 5V ± 10 % power supply.
  • Package : 44-pin TSOP (Type II).
  • Three state outputs.
  • Commercial, Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62C25616EL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62C25616EL, IS65C25616EL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM AUGUST 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Package : 44-pin TSOP (Type II)  Three state outputs  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65C25616EL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.