Download the IS65WV10248DBLL datasheet PDF.
This datasheet also covers the IS62WV10248DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.
General Description
by 8 bits.
CMOS technology.
Key Features
High-speed access time: 45ns, 55ns.
CMOS low power operation.
30 mW (typical) operating.
12 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.65V--2.2V Vdd (62/65WV10248DALL).
2.4V--3.6V Vdd (62/65WV10248DBLL).
Fully static operation: no clock or refresh
required.
Full PDF Text Transcription for IS65WV10248DBLL (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS65WV10248DBLL. For precise diagrams, and layout, please refer to the original PDF.
IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MA Y 2009 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power opera...
View more extracted text
9 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 30 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vdd (62/65WV10248DALL) – 2.4V--3.6V Vdd (62/65WV10248DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Automotive temperature (-40oC to +125oC) • Lead-free available DESCRIPTION The ISSI IS62WV10248DALL/ IS62WV10248DBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology
IS65WV10248DBLL Datasheet
