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IS65WVS2568GALL - 256K x 8 LOW VOLTAGE FAST SERIAL SRAM

General Description

The ISSI IS62/65WVS2568GALL/GBLL are 2M bit Fast Serial static RAMs organized as 256K bytes by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

The device is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus.

Key Features

  • SPI-Compatible Bus Interface: - 30/45 MHz Clock rate - SPI/SDI/SQI mode.
  • Single Power Supply: - VDD = 1.65V - 2.2V (IS62/65WVS2568GALL) - VDD = 2.70V - 3.6V (IS62/65WVS2568GBLL).
  • Read Latency: - SPI mode: 8 clocks - DPI mode: 4 clocks - QPI mode: 2 clocks.
  • Low-Power CMOS Technology: - Read Current: 10 mA(max) at 3.6V, 45 MHz, 85°C - CMOS Standby Current: 4 A(typ).
  • 512K x 8-bit Organization: - 32-byte page.
  • Byte, Page and Sequential mo.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WVS2568GBLL 256K x 8 LOW VOLTAGE FAST SERIAL SRAM
IS65WVS5128FALL 512K x 8 LOW VOLTAGE SERIAL SRAM
IS65WVS5128FBLL 512K x 8 LOW VOLTAGE SERIAL SRAM
IS65WVS5128GALL FAST SERIAL SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62/65WVS2568GALL IS62/65WVS2568GBLL 256Kx8 LOW VOLTAGE, FAST SERIAL SRAM with SPI, SDI and SQI INTERFACE MAY 2018 KEY FEATURES • SPI-Compatible Bus Interface: - 30/45 MHz Clock rate - SPI/SDI/SQI mode • Single Power Supply: - VDD = 1.65V - 2.2V (IS62/65WVS2568GALL) - VDD = 2.70V - 3.6V (IS62/65WVS2568GBLL) • Read Latency: - SPI mode: 8 clocks - DPI mode: 4 clocks - QPI mode: 2 clocks • Low-Power CMOS Technology: - Read Current: 10 mA(max) at 3.