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IS66WVE1M16BLL Datasheet 3.0v Core Async/page Psram

Manufacturer: ISSI (now Infineon)

Overview: IS66WVE1M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE1M16BLL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 55ns, 70ns.
  • Intrapage Read access : 20ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 18mA.
  • Standby < 80 uA (max. ).
  • Deep power-down (DPD) < 3uA (Typ).
  • Low Power Feature.
  • Temperature Controlled Refresh.
  • Partial Array Refresh.
  • Deep pow.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16EALL 16Mb Async/Page PSRAM
IS66WVE1M16EBLL 16Mb Async/Page PSRAM
IS66WVE1M16ECLL 16Mb Async/Page PSRAM
IS66WVE1M16TALL 16Mb Async/Page PSRAM
IS66WVE1M16TBLL 16Mb Async/Page PSRAM
IS66WVE1M16TCLL 16Mb Async/Page PSRAM
IS66WVE2M16ALL 1.8V Core Async/Page PSRAM
IS66WVE2M16BLL 3.0V Core Async/Page PSRAM
IS66WVE2M16DALL 1.8V Core Async/Page PSRAM

IS66WVE1M16BLL Distributor