IS66WVQ4M4EDALL - 16Mb QUADRAM

Product Overview

ISSI

Datasheet Details

Part number	IS66WVQ4M4EDALL
Manufacturer	ISSI
File Size	927.74 KB
Description	16Mb QUADRAM
Datasheet	IS66WVQ4M4EDALL Datasheet
Additional preview pages of the IS66WVQ4M4EDALL datasheet.

Product details

Description

The IS66/67WVQ4M4EDALL/BLL are integrated memory device containing 16Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 2M words by 8 bits.

Features

Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
High Performance - On chip ECC (chunk size = 4 bit): 1-bit correction and 2-bit detection - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC (1) 133MHz (133MB/s) at 3.0V VCC - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configura.

📁 Similar Datasheet

IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
IS660 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS661 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS662 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS6003 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
IS6005 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
IS6010 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)

Other Datasheets by ISSI

IS66WVQ4M4EDBLL - 16Mb QUADRAM
IS66WVQ4M4DALL - 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WVQ4M4DBLL - 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WVQ16M4FALL - 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WVQ16M4FBLL - 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WV1M16DALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Published: Feb 17, 2024 |